APTGT150X120E3G APTGT150X120E3G ? rev 1 january, 2006 apt website ? http:/ / www.advancedpower.com 1 - 5 absolute maximum ratings symbol parameter max ratings unit v ces collector - emitter breakdown voltage 1200 v t c = 25c 220 i c continuous collector current t c = 80c 150 i cm pulsed collector current t c = 25c 350 a v ge gate ? emitter voltage 20 v p d maximum power dissipation t c = 25c 700 w rbsoa reverse bias safe operating area t j = 125c 300a @ 1150v these devices are sensitive to electrostatic discharge. proper handing procedures should be followe d. 13 14 17 19 15 89 11 10 12 21 20 56 34 12 7 v ces = 1200v i c = 150a @ tc = 80c applicatio n ? ac motor control features ? trench + field stop igbt ? technology - low voltage drop - low tail current - switching freque nc y up to 20 khz - soft recovery parallel diodes - low diode vf - low leakage current - avalanche energy rated - rbsoa and scsoa rated ? kelvin emitter for easy drive ? very low stray inductance ? high level of integration benefits ? stable temperature behavior ? very rugged ? solderable terminals for easy pcb mounting ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? easy paralleling due to positive t c of v cesat ? low profile ? rohs complaint 3 phase bridge trench + field stop igbt ? power modul e
APTGT150X120E3G APTGT150X120E3G ? rev 1 january, 2006 apt website ? http:/ / www.advancedpower.com 2 - 5 all ratings @ t j = 25c unless otherwise specified electrical characteristics symbol characteristic test conditions min typ max unit i ces zero gate voltage collector current v ge = 0v, v ce = 1200v 250 a t j = 25c 1.7 2.1 v ce(sat) collector emitter saturation voltage v ge = 15v i c = 150a t j = 125c 2.0 v v ge(th) gate threshold voltage v ge = v ce , i c = 6ma 5.0 5.8 6.5 v i ges gate ? emitter leakage current v ge = 20v, v ce = 0v 600 na dynamic characteristics symbol characteristic test conditions min typ max unit c ies input capacitance 10.8 c oes output capacitance 0.56 c res reverse transfer capacitance v ge = 0v v ce = 25v f = 1mhz 0.5 nf t d(on) tur n-o n delay ti me 250 t r rise time 30 t d(off) turn-off delay time 420 t f fall time inductive switching (25c) v ge = 15v v bus = 600v i c = 150a r g = 2.2 ? 70 ns t d(on) tur n-o n delay ti me 300 t r rise time 50 t d(off) turn-off delay time 520 t f fall time inductive switching (125c) v ge = 15v v bus = 600v i c = 150a r g = 2.2 ? 90 ns e on tur n-o n switchi ng energy t j = 125c 14 e off turn-off switching energy v ge = 15v v bus = 600v i c = 150a r g = 2.2 ? t j = 125c 17 mj reverse diode ratings and characteristics symbol characteristic test conditions min typ max unit v rrm maximum peak repetitive reverse voltage 1200 v t j = 25c 250 i rm maximum reverse leakage current v r =1200v t j = 125c 500 a i f dc forward current tc = 80c 150 a t j = 25c 1.6 2.1 v f diode forward voltage i f = 150a v ge = 0v t j = 125c 1.6 v e r reverse recovery energy t j = 125c 12 mj t j = 25c 170 t rr reverse recovery time t j = 125c 280 ns t j = 25c 15 q rr reverse recovery charge i f = 150a v r = 600v di/dt =3000a/s t j = 125c 29 c
APTGT150X120E3G APTGT150X120E3G ? rev 1 january, 2006 apt website ? http:/ / www.advancedpower.com 3 - 5 thermal and package characteristics symbol characteristic min typ max unit igbt 0.18 r thjc junction to case thermal resistance diode 0.34 c/w v isol rms isolation voltage, any terminal to case t =1 min, i isol<1ma, 50/60hz 2500 v t j operating junction temperature range -40 150 t stg storage temperature range -40 125 t c operating case temperature -40 125 c torque mounting torque to heatsink m5 3 4.5 n.m wt package weight 300 g e3 package outline (dimensions in mm) pi n 1 pi n 2 1 all d i m ens ion s ma rke d " * " ar e t olere nc ed a s :
APTGT150X120E3G APTGT150X120E3G ? rev 1 january, 2006 apt website ? http:/ / www.advancedpower.com 4 - 5 typical performance curve output characteristics (v ge =15v) t j =25c t j =125c 0 50 100 150 200 250 300 01234 v ce (v) i c (a) output characteristics v ge =15v v ge =13v v ge =17v v ge =9v 0 50 100 150 200 250 300 01234 v ce (v) i c (a) t j = 125c transfert characteristics t j =25c t j =125c t j =125c 0 50 100 150 200 250 300 56789101112 v ge (v) i c (a) energy losses vs collector current eon eon eoff er 0 10 20 30 40 0 50 100 150 200 250 300 i c (a) e (mj) v ce = 600v v ge = 15v r g = 2.2 ? t j = 125c eon eon eoff er 0 5 10 15 20 25 30 35 0 2 4 6 8 10121416 gate resistance (ohm s) e (mj) v ce = 600v v ge =15v i c = 150a t j = 125c switching energy losses vs gate resistance reverse safe operating area 0 50 100 150 200 250 300 350 0 400 800 1200 1600 v ce (v) i c (a) v ge =15v t j =125c r g =2.2 ? maximum effective transient thermal impedance, junction to pulse duration 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16 0.18 0.2 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) igbt
APTGT150X120E3G APTGT150X120E3G ? rev 1 january, 2006 apt website ? http:/ / www.advancedpower.com 5 - 5 forward characteristic of diode t j =25c t j =125c 0 50 100 150 200 250 300 0 0.4 0.8 1.2 1.6 2 2.4 v f (v) i c (a) hard switching zcs zvs 0 10 20 30 40 50 60 10 40 70 100 130 160 190 220 i c (a) fmax, operating frequency (khz) v ce =600v d= 50% r g =2.2 ? t j =125c t c =75c operating frequency vs collector current maximum effective transient thermal impedance, junction to pulse duration 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) diode apt re s e rves the rig ht to c ha nge , witho ut notice , the s pe cificatio ns and info rma tio n co nta ine d he re in apt's products are covered by one or more of u.s patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. u.s and foreign pa tents pending. all rights reserved.
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